Methods for fabricating transistors including one or more circular trenches

US8754472B2 · kind B2 · utility

Assignee

• O2Micro Inc. · US

Inventors

• Hamilton Lu · Los Angeles, US
• Laszlo Lipcsei · Campbell, US

Key dates

• Filing date: Mar 10, 2011
• Grant date: Jun 17, 2014
• Expiry date: Mar 10, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

A transistor and a method of fabricating a transistor, including a metal oxide deposited on an epitaxial layer, a photo resist deposited and patterned over the metal oxide and the metal oxide and epitaxial layer are etched to form at least one circular trench, wherein the trench surfaces are defined by the epitaxial layer. An oxide layer is grown on the trench surfaces of each trench, and a gate conductor is formed within the at least one trench.