Integrated antenna structure on separate semiconductor die
US8754818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2012 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Sep 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments relate to a semiconductor module comprising an integrated antenna structure configured to wirelessly transmit signals. The integrated antenna structure has a lower metal layer and an upper metal layer. The lower metal layer is disposed on a lower die and is connected to a ground terminal. The upper metal layer is disposed on an upper die and is connected to a signal generator configured to generate a signal to be wirelessly transmitted. The upper die is stacked on the lower die and is connected to the lower die by way of an adhesion layer having one or more micro-bumps. By connecting the lower and upper die together by way of the adhesion layer, the lower and upper metal layers are separated from each other by a large spacing that provides for a good performance of the integrated antenna structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.