Terahertz wave emission laser device
US8755414B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 12, 2009 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Sep 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.5 to 5 THz, the radiation being obtained through the difference in frequency of the two whispering gallery modes, the cylindrical geometry of the heterostructure ensuring phase tuning between the two optical whispering gallery modes belonging to the near-infrared spectrum and the terahertz mode at the difference in frequency; a second and a third semiconductor material layer, each having an optical index weaker than the index of the material of the first layer and located on both sides of the first layer; at least one metal layer located on one end of the hetero structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.