Formation of a thin film of molecular organic semiconductor material
US8758508B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 24, 2008 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Jul 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/622
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for forming a thin film of molecular organic semiconductor material (OSCM), said film being intended to be integrated into a device for applications in electronics or optoelectronics, which includes the following steps: step (c) of supplying a defined quantity of the molecular OSCM in the form of a melt to the surface of a substrate so as to form a thin film; and a step (d) of cooling according to a defined temperature profile in order to solidify the thin film, characterized in that the temperature of the substrate surface is equal to or above the melting point of the molecular OSCM at the moment of implementing step (a) and in that the temperature profile of step (b) comprises: a first part corresponding to a sufficiently slow controlled cooling of the molecular OSCM down to a temperature close to the crystallization temperature of the molecular OSCM, so as to cause only a single seed to appear in the thin film in melt form; and a second part corresponding to controlled cooling so that at least one single-crystal domain grows from this seed, the thin film finally obtained being a single-crystal film. The invention further relates to a method of f…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.