Deposition system with a rotating drum
US8758580B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 17, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Apr 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3476
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.