Photoresist underlayer composition and method of manufacturing semiconductor device by using the same
US8758981B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jul 2, 2012 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Jul 2, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1:{(SiO1.5—Y—SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f. [Chemical Formula 1]
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.