Buried selective emitter formation for photovoltaic devices utilizing metal nanoparticle catalyzed etching
US8759139B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Sep 29, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of forming a photovoltaic device containing a buried emitter region and vertical metal contacts is provided. The method includes forming a plurality of metal nanoparticles on exposed portions of a single-crystalline silicon substrate that are not covered by patterned antireflective coatings (ARCs). A metal nanoparticle catalyzed etching process is then used to form trenches within the single-crystalline silicon substrate and thereafter the metal nanoparticles are removed from the trenches. An emitter region is then formed within exposed portions of the single-crystalline silicon substrate, and thereafter a metal contact is formed atop the emitter region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.