Method for manufacturing semiconductor substrate
US8759204B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2013 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | May 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive concept provides methods for manufacturing a semiconductor substrate. The method may include forming a stop pattern surrounding an edge of a substrate, forming a transition layer an entire top surface of the substrate except the stop pattern, and forming an epitaxial semiconductor layer on the transition layer and the stop pattern. The epitaxial semiconductor layer may not be grown from the stop pattern. That is, the epitaxial semiconductor layer may be isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer may gradually cover the stop pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.