Semiconductor device and method of manufacturing semiconductor device
US8759212B2 · kind B2 · utility
9Cited by
28References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Nov 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of the cap insulating film, on the cap insulating film; and forming two or more concave portions, having different opening diameters, in the organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.