Method of etching a semiconductor wafer
US8759214B2 · kind B2 · utility
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4References
10Claims
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Assignee
Inventor
Key dates
| Filing date | Feb 13, 2009 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Feb 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for anisotropically plasma etching a semiconductor wafer is disclosed. The method comprises supporting a wafer in an environment operative to form a plasma, such as a plasma reactor, and providing an etching mixture to the environment. The etching mixture comprises at least one etch component, at least one passivation component, and at least one passivation material removal component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.