Compositions and methods for polishing silicon nitride materials
US8759216B2 · kind B2 · utility
4Cited by
30References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2006 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.