Method for fabrication of semiconductor device
US8759222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2007 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Dec 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a method for fabrication of semiconductor device involving a first step of coating the substrate with a double-layered insulating film in laminate structure having the skeletal structure of inorganic material and a second step of etching the upper layer of the insulating film as far as the lower layer of the insulating film. In the method for fabrication of semiconductor device, the first step is carried out in such a way that the skeletal structure is incorporated with a pore-forming material of hydrocarbon compound so that one layer of the insulating film contains more carbon than the other layer of the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.