Low-impurity organosilicon product as precursor for CVD
US8759563B2 · kind B2 · utility
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9References
25Claims
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Key dates
| Filing date | Nov 5, 2012 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Nov 5, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/1804
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.