Barrier and planarization layer for thin-film photovoltaic cell

US8759669B2 · kind B2 · utility

Assignee

• Hanergy Hi-Tech Power (HK) Limited · CN

Inventors

• Urs Schoop · Westborough, US
• Walter Stoss · Tucson, US
• Nguyet-Phuong Nguyen · Grenoble, FR
• Scott Wiedeman · Langhorne, US

Key dates

• Filing date: Jan 16, 2012
• Grant date: Jun 24, 2014
• Expiry date: Jul 16, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Thin film photovoltaic cells and methods of manufacturing such cells that include one or more diffusion barrier layers configured to provide a relatively smooth growth surface for subsequent deposition of a p-type semiconductor layer. Diffusion barrier layers according to the present teachings may be amorphous, microcrystalline or nanocrystalline layers of materials including molybdenum, conductive oxides, conductive nitrides, conductive carbides, or mixtures thereof. In some cases a diffusion barrier layer may be configured to have surface roughness less than a predetermined threshold value.