Phase-change memory cell
US8759808B2 · kind B2 · utility
5Cited by
8References
12Claims
0Family size
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Key dates
| Filing date | Sep 4, 2013 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Sep 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.