Phase change memory devices with relaxed stress
US8759810B2 · kind B2 · utility
2Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Sep 24, 2010 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Sep 24, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/81
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device that utilizes a nanowire structure. Usage of the nanowire structure permits the phase change memory device to release its stress upon amorphization via the minimization of reset resistance and threshold resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.