Patent · US Active

Schottky-quantum dot photodetectors and photovoltaics

US8759816B2 · kind B2 · utility

9Cited by
56References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 16, 2011
Grant dateJun 24, 2014
Priority date
Expiry dateSep 16, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.