Vertical organic field effect transistor and method of its manufacture
US8759830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2010 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Aug 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/623
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An electronic device (100) is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure (102) which is enclosed between a dielectric layer (105) and an active element (106) of the electronic device (100). The electrically-conductive perforated patterned structure (102) comprises a geometrical pattern defining an array of spaced-apart perforation regions (108) surrounded by continuous electrically conductive regions (110). The pattern is such as to allow the active element (106) of the electronic device (100) to be in direct contact with said dielectric layer (105) aligned with the perforation regions (108). A material composition of the device (100) and features of said geometrical pattern are selected to provide a desired electrical conductance of the electrically-conductive perforated patterned structure (102) and a desired profile of a charge carriers' injection barrier along said structure (102).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.