Light emitting diode

US8759858B2 · kind B2 · utility

Assignees

• TSINGHUA UNIVERSITY · CN
• HON HAI PRECISION INDUSTRY CO., LTD. · TW

Inventors

• Zhen-Dong Zhu · Beijing, CN
• Qun Li · Beijing, CN
• Li Zhang · Beijing, CN
• Mo Chen · Beijing, CN
• Shou-Shan Fan · Beijing, CN

Key dates

• Filing date: May 23, 2012
• Grant date: Jun 24, 2014
• Expiry date: May 23, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.