Semiconductor light emitting device
US8759867B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2009 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Dec 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8583
Abstract
A semiconductor light emitting device, has a package constituted by the lamination of a first insulating layer having a pair of positive and negative conductive wires formed on its upper face, an inner-layer wire below the first insulating layer, and a second insulating layer below the inner-layer wire; a semiconductor light emitting element that has a pair of positive and negative electrodes on the same face side and that is disposed with these electrodes opposite the conductive wires; and a sealing member that covers the semiconductor light emitting element, wherein part of the conductive wires is formed extending in the outer edge direction of the sealing member from directly beneath the semiconductor light emitting element, on the upper face of the first insulating layer, and is connected to the inner-layer wire via a conductive wire disposed in the thickness direction of the package, and the inner-layer wire is disposed so as to be spaced apart from the outer periphery of the semiconductor light emitting element in a see-through view of the package from the upper face side of the first insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.