Bispectral multilayer photodiode detector and method for manufacturing such a detector

US8759873B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Olivier Gravrand · Saint-Égrève, FR
• Jacques Baylet · Grenoble, FR

Key dates

• Filing date: Sep 13, 2011
• Grant date: Jun 24, 2014
• Expiry date: May 19, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/813

Abstract

A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity type implanted in upper layer and lower layer and each implanted at least partially in the bottom of an opening that passes through upper layer and intermediate layer; and conductor elements connected to semiconductor zones. At least that part of each opening that passes through upper layer is separated from the latter by a semiconductor cap layer: whereof the concentration of dopants of the second conductivity type is greater than 1017 cm−3; and whereof the thickness is chosen as a function of said concentration so that it exceeds the minority carrier diffusion length in the cap layer.