Super trench schottky barrier schottky diode

US8759888B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Ning Qu · Beijing, CN
• Alfred Goerlach · Tübingen, DE

Key dates

• Filing date: Nov 30, 2012
• Grant date: Jun 24, 2014
• Expiry date: Dec 29, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A Schottky diode includes an n+-substrate, an n-epilayer, trenches introduced into the n-epilayer, floating Schottky contacts being located on their side walls and on the entire trench bottom, mesa regions between the adjacent trenches, a metal layer on its back face, this metal layer being used as a cathode electrode, and an anode electrode on the front face of the Schottky diode having two metal layers, the first metal layer of which forms a Schottky contact and the second metal layer of which is situated below the first metal layer and also forms a Schottky contact. Preferably, these two Schottky contacts have different barrier heights.