High-voltage transistor device
US8759912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
A high-voltage transistor device comprises a spiral resistive field plate over a first well region between a drain region and a source region of the high-voltage transistor device, wherein the spiral resistive field plate is separated from the first well region by a first isolation layer, and is coupled between the drain region and the source region. The high-voltage transistor device further comprises a plurality of first field plates over the spiral resistive field plate with each first field plate covering one or more segments of the spiral resistive field plate, wherein the plurality of first field plates are isolated from the spiral resistive field plate by a first dielectric layer, and wherein the plurality of first field plates are isolated from each other, and a starting first field plate is connected to the source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.