Photodetector with a plasmonic structure

US8759932B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Olivier Gravrand · Saint-Égrève, FR
• Gerard Destefanis · Yssingeaux, FR
• Jérôme Le Perchec · Grenoble, FR

Key dates

• Filing date: Nov 29, 2010
• Grant date: Jun 24, 2014
• Expiry date: May 15, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/806

Abstract

This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.