Semiconductor device comprising an isolation trench including semiconductor islands

US8759942B2 · kind B2 · utility

Assignee

• X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

• Alexander Hoelke · Sebauh, MY
• Deb Kumar Pal · Sebauh, MY
• Pei Shan Chua · Sebauh, MY
• Gopalakrishnan Kulathu Sankar · Sebauh, MY
• Kia Yaw Kee · Sebauh, MY
• Yang Hao · Shanghai, CN
• Uta Kuniss · Stadtilm, DE

Key dates

• Filing date: May 22, 2009
• Grant date: Jun 24, 2014
• Expiry date: May 22, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.