Fuse structures, e-fuses comprising fuse structures, and semiconductor devices comprising e-fuses
US8759945B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Jun 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fuse structure, an e-fuse including the fuse structure and a semiconductor device including the e-fuse are disclosed. The fuse structure includes first and second electrodes extending in a first direction, and spaced a predetermined distance apart from each other and having one ends thereof facing each other, an insulation layer formed between the one end of the first electrode and the one end of the second electrode facing each other, and a conductive film overlapping portions of the first and second electrodes on the insulation layer and contacting the first electrode and the one end of the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.