Low-impedance high-swing power supply with integrated high positive and negative DC voltage protection and electro-static discharge (ESD) protection
US8760829B2 · kind B2 · utility
3Cited by
1References
27Claims
0Family size
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Key dates
| Filing date | Apr 2, 2012 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Oct 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus comprises a first PFET including a first intrinsic body diode; an electrostatic discharge (ESD) subcircuit coupled to a source of the first PFET; a reverse bias voltage element, such as a zener diode, an anode of which is coupled to a gate of the first PFET; a second PFET having a source coupled to a cathode of the zener diode a capacitor coupled to a gate the second PFET; and a first resistor coupled to the gate of the second PFET. The apparatus can protect against both positive and negative electro static transient discharge events.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.