Patent · US Active

Determination of memory read reference and programming voltages

US8760932B2 · kind B2 · utility

4Cited by
24References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 18, 2011
Grant dateJun 24, 2014
Priority date
Expiry dateApr 14, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/3418
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Symmetrical or asymmetrical noise distributions for voltages corresponding to symbols that can be stored in multi-level memory cells (MLCs) of a memory device are used to determine read reference and/or programming voltages. The read reference voltages and/or programming voltages for the MLCs are jointly determined using the symmetrical distributions and a maximum likelihood estimation (MLE) and/or by determining at least one of the read reference voltages and the programming voltages using the asymmetrical distributions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.