Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes
US8761218B2 · kind B2 · utility
6Cited by
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28Claims
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Key dates
| Filing date | Apr 5, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Feb 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.