Optoelectronic semiconductor chip with gas-filled mirror
US8761219B2 · kind B2 · utility
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2References
23Claims
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Key dates
| Filing date | Aug 5, 2009 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Feb 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
Abstract
An optoelectronic semiconductor chip includes a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.