Patent · US Active

Error prediction in logic and memory devices

US8762804B2 · kind B2 · utility

4Cited by
4References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 6, 2012
Grant dateJun 24, 2014
Priority date
Expiry dateAug 6, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/0409
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Potential errors that might result from operating logic and/or memory circuits at an insufficient operating voltage are identified by electrically altering nodes of replica or operational circuits so that the electrically altered nodes are susceptible to errors. The electrically altered nodes in an embodiment are controlled using parametric drivers. A minimized operating voltage can be selected by operating at a marginal operating voltage and detecting a voltage threshold at which errors in the electrically altered nodes are detected, for example.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.