Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition
US8765028B2 · kind B2 · utility
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3References
31Claims
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Key dates
| Filing date | May 24, 2011 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jul 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.