Semiconductor device structures and the separating methods thereof
US8765504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jun 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.