Transitioned film growth for conductive semiconductor materials
US8765514B1 · kind B1 · utility
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38Claims
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Key dates
| Filing date | Nov 12, 2010 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Apr 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A center region of conductive material/s may be disposed or “sandwiched” between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.