Formulations and method for post-CMP cleaning
US8765653B2 · kind B2 · utility
7Cited by
11References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2010 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jun 10, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/423
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant.The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.