Patent · US Active

Dopant-containing contact material

US8766088B2 · kind B2 · utility

9Cited by

9References

5Claims

0Family size

Assignee

First Solar, Inc. · US

Inventors

Long Cheng · Hsinchu, TW
Akhlesh Gupta · Sylvania, US
Anke Abken · Whitehouse, US
Benyamin Buller · Cupertino, US

Key dates

Filing date	Jun 3, 2010
Grant date	Jul 1, 2014
Priority date	—
Expiry date	Apr 12, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/548

Abstract

A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.