Thin-film transistor and method for manufacturing thin-film transistor
US8766260B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 7, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material and formed above the amorphous silicon semiconductor layer; and a source electrode and a drain electrode formed above the amorphous silicon semiconductor layer interposing the organic protective film are included, and a charge density of the negative carriers in the amorphous silicon semiconductor layer is at least 3×1011 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.