Semiconductor wafer, method of manufacturing a semiconductor wafer, and electronic device
US8766318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Mar 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/675
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that has an open portion reaching the silicon wafer; a Ge crystal formed in the open portion; a seed compound semiconductor crystal that is grown with the Ge crystal as a nucleus and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.