Field-effect transistor, single-electron transistor and sensor
US8766326B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jul 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.