Epitaxial growth of single crystalline MgO on germanium
US8766341B2 · kind B2 · utility
24Cited by
4References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2010 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Nov 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/385
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO [100](001)//Ge[110](001) heterostructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.