Discrete semiconductor device and method of forming sealed trench junction termination
US8766398B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Mar 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second conductivity type of semiconductor material. A trench is formed through the second semiconductor layer and extends into the second semiconductor layer. The trench has a rounded or polygonal shape and vertical sidewalls. The trench is lined with an insulating layer and filled with an insulating material. A boundary between the first and second semiconductor layers forms a p-n junction. The trench surrounds the p-n junction to terminate the electric field of a voltage imposed on the second semiconductor layer. The discrete semiconductor device can also be a transistor, thyristor, triac, or transient voltage suppressor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.