Patent · US Active

Integration of piezoelectric materials with substrates

US8766512B2 · kind B2 · utility

2Cited by
35References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 31, 2010
Grant dateJul 1, 2014
Priority date
Expiry dateDec 31, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/42
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.