Voltage regulator circuit and semiconductor device, including transistor using oxide semiconductor
US8766608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2010 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | May 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.