Through silicon via-based oscillator wafer-level-package structure and method for fabricating the same
US8766734B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Sep 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/19
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention provides a TSV-based oscillator WLP structure and a method for fabricating the same. The method of the present invention comprises steps: providing a silicon base having an oscillator unit disposed thereon; forming on the silicon base at least one package ring surrounding the oscillator unit; and disposing a silicon cap on the package ring to envelop the oscillator unit. The present invention adopts a cap and a base, which are made of the same material, to effectively overcome the problem of thermal stress occurring in a conventional sandwich package structure. Further, the present invention elaborately designs the wiring on the lower surface of the base to reduce the package size and decrease consumption of noble metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.