Radiation-hardened memory element with multiple delay elements
US8767444B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Mar 27, 2006 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jan 6, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A radiation hardened memory element includes at least two delay elements for maintaining radiation hardness. In an example, the memory element is an SRAM cell. Both delays are coupled together in series so that if either one of the delays fails, a delay will still be maintained within the SRAM cell. The critical areas of the delays may be positioned so that a common line of sight cannot be made between each delay and a circuit node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.