Nonvolatile memory device capable of reducing read disturbance and read method thereof
US8767468B2 · kind B2 · utility
6Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2011 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jun 15, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a nonvolatile memory device and a read method of the same. The read method applying one of a plurality of unselected read voltages to unselected wordlines adjacent to a selected word line. The voltage applied to the unselected word lines being based on which of a plurality of selected read voltages is applied to the selected wordline.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.