Method for electrically pumped semiconductor evanescent laser

US8767792B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• John E. Bowers · Lompoc, US
• Oded Cohen · Kiryat Tivon, IL
• Alexander W. Fang · Goleta, US
• Richard Jones · San Mateo, US
• Mario Paniccia · Santa Clara, US
• Hyundai Park · Goleta, US

Key dates

• Filing date: Mar 15, 2013
• Grant date: Jul 1, 2014
• Expiry date: Mar 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/223
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.