Method for imprint lithography
US8771529B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2010 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A method of imprint lithography includes imprinting a first pattern with a first template on a first substrate of a lithographic template. A second pattern is imprinted with a second template on the substrate of the lithographic template. The first pattern and the second pattern at least partially overlap, thus forming a third pattern. The third pattern is lithographically formed on a second substrate with the lithographic template. In an embodiment, the first pattern is a concentric line pattern formed by thin film deposition. In an embodiment, the second pattern is a radial line pattern. In an embodiment the first pattern and the second pattern may have line frequency increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.