Method for manufacturing semiconductor device
US8772128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2008 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Jul 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0323
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.