Metal gate transistors and fabrication method thereof

US8772148B1 · kind B1 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Xinpeng Wang · Singapore, SG
• Qiyang He · Shanghai, CN

Key dates

• Filing date: Sep 18, 2013
• Grant date: Jul 8, 2014
• Expiry date: Sep 18, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

A method is provided for fabricating a metal gate transistor. The method includes providing a semiconductor substrate; and forming a dielectric layer on the semiconductor substrate. The method also includes forming at least one dummy gate on the dielectric layer; and forming a first sidewall spacer around the dummy gate. Further, the method includes forming a gate dielectric layer with sidewalls protruding from sidewalls of the dummy gate and vertical to the semiconductor substrate by etching the dielectric layer using the first sidewall spacer and the dummy gate as an etching mask; and removing the dummy gate to form a trench. Further, the method also includes forming a metal gate in the trench; and forming a source region and a drain region in the semiconductor substrate.